We demonstrated the energy harvesting potential and piezotronic effect in vertically aligned CdSe nanowire (NW) arrays for the first time. The CdSe NW arrays were grown on a mica substrate by the vapor鈥搇iquid鈥搒olid process using a CdSe thin film as seed layer and platinum as catalyst. High-resolution transmission electron microscopy ima
ge and selected area electron diffraction pattern indicate that the CdSe NWs have a wurtzite structure and growth direction along 0001. Using conductive atomic force microscopy (AFM), an avera
ge output volta
ge of 30.7 mV and maximum of 137 mV were obtained. To investigate the effect of strain on electron transport, the current鈥搗olta
ge characteristics of the NWs were studied by positioning an AFM tip on top of an individual NW. By applying normal force/stress on the NW, the Schottky barrier between the Pt and CdSe was found to be elevated due to the piezotronic effect. With the chan
ge of strain of 0.12%, a current decreased from 84 to 17 pA at 2 V bias. This paper shows that the vertical CdSe NW array is a potential candidate for future piezo-phototronic devices.
Keywords:
CdSe nanowire; piezotronic effect; energy harvesting; piezotronic transistor