Growth Mechanism of TiSi Nanopins on Ti5Si3 by Atmospheric Pressure Chemical Vapor Deposition
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- 作者：Jun Du ; Piyi Du ; Peng Hao ; Yanfei Huang ; Zhaodi Ren ; Gaorong Han ; Wenjian Weng ; Gaoling Zhao
- 刊名：Journal of Physical Chemistry C
- 出版年：2007
- 出版时间：July 26, 2007
- 年：2007
- 卷：111
- 期：29
- 页码：10814 - 10817
- 全文大小：368K
- 年卷期：v.111,no.29(July 26, 2007)
- ISSN：1932-7455
文摘
High-density single crystalline orthorhombic TiSi nanopins were successfully synthesized on Ti5Si3 byatmospheric pressure chemical vapor deposition, using SiH4 and TiCl4 as the precursors. The growth mechanismwas also investigated in detail. The results show that the maximum density of TiSi nanopins is obtained atthe deposition temperature of 730 
C. TiSi nanopins grow along with [110] direction. The dimensions ofquadrate tip of nanopins increase with deposition time, and the shape of the nanopin changes with theconcentration of (SiH4 + TiCl4). A possible growth process is proposed which is well consistent with theexperimental results.
C. TiSi nanopins grow along with [110] direction. The dimensions ofquadrate tip of nanopins increase with deposition time, and the shape of the nanopin changes with theconcentration of (SiH4 + TiCl4). A possible growth process is proposed which is well consistent with theexperimental results.