Controlling Novel Red-Light Emissions by Doping In2O3 Nano/Microstructures with Interstitial Nitrogen

详细信息    查看全文

• 作者：Wenyan Yin ; Daniel V. Esposito ; Shizhong Yang ; Chaoying Ni ; Jingguang G. Chen ; Guanglin Zhao ; Zhengjun Zhang ; Changwen Hu ; Minhua Cao ; Bingqing Wei
• 刊名：Journal of Physical Chemistry C
• 出版年：2010
• 出版时间：August 12, 2010
• 年：2010
• 卷：114
• 期：31
• 页码：13234-13240
• 全文大小：407K
• 年卷期：v.114,no.31(August 12, 2010)
• ISSN：1932-7455

文摘

Red-light (620−750 nm) has promisingly been used as a primary phototherapy tool in the medical field that can easily penetrate through the body of patients. Here we report that interstitially N-doped In₂O₃ nano/microstructures including nanorods, nanoellipses, microspheres, and microbricks, show a unique, novel, and wide range red-light emission under 350 nm wavelength excitation, in addition to blue-light emissions. A new electronic transition mechanism suggests that the red-light emissions of the In₂O₃ nano/microstructures are originated from the interstitial nitrogen doping based on the first principles density functional theory computations. These newly developed red-light emission materials, N-doped In₂O₃ nano/microstructures, can be added into the red-light emission semiconductor family and will have significant application potential for optoelectronic devices such as red-light emitting diodes and lasers.