Effect of Electron-Beam Irradiation on Organic Semiconductor and Its Application for Transistor-Based Dosimeters

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• 作者：Jae Joon Kim ; Jun Mok Ha ; Hyeok Moo Lee ; Hamid Saeed Raza ; Ji Won Park ; Sung Oh Cho
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：August 3, 2016
• 年：2016
• 卷：8
• 期：30
• 页码：19192-19196
• 全文大小：318K
• 年卷期：0
• ISSN：1944-8252

文摘

The effects of electron-beam irradiation on the organic semiconductor rubrene and its application as a dosimeter was investigated. Through the measurements of photoluminescence and the ultraviolet photoelectron spectroscopy, we found that electron-beam irradiation induces n-doping of rubrene. Additionally, we fabricated rubrene thin-film transistors with pristine and irradiated rubrene, and discovered that the decrease in transistor properties originated from the irradiation of rubrene and that the threshold voltages are shifted to the opposite directions as the irradiated layers. Finally, a highly sensitive and air-stable electron dosimeter was fabricated based on a rubrene transistor.