Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers

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• 作者：Jeong Hwan Han ; Woongkyu Lee ; Woojin Jeon ; Sang Woon Lee ; Cheol Seong Hwang ; Changhee Ko ; Julien Gatineau
• 刊名：Chemistry of Materials
• 出版年：2012
• 出版时间：December 21, 2012
• 年：2012
• 卷：24
• 期：24
• 页码：4686-4692
• 全文大小：391K
• 年卷期：v.24,no.24(December 21, 2012)
• ISSN：1520-5002

文摘

SrRuO₃ (SRO) film was deposited by sequential executions of atomic layer deposition of SrO and chemical vapor deposition of RuO₂ layers at a low growth temperature of 230 掳C using Sr(ⁱPr₃Cp)₂, RuO₄ precursors, and O₂ gas. A wide range of Sr (Ru) concentration could be obtained by modulating the SrO/RuO₂ subcycle ratio, and a high growth rate of 2.0 nm/supercycle was achieved with the stoichiometric SRO composition. The as-deposited SRO film was amorphous, and crystallized SRO film was obtained by post deposition annealing in N₂ ambient at temperatures ranging from 600 to 700 掳C. Crystallized SRO film was adopted as a seed layer for the in situ crystallization of ALD SrTiO₃ (STO) film for application to capacitors for next generation dynamic random access memory. Consequently, a crystalline STO film was grown on crystallized SRO in the as-deposited state, and the dielectric constant of the STO film was largely improved compared to that of the amorphous STO, from 12 to 44.

Keywords:

SrRuO₃; RuO₄; Sr(ⁱPr₃Cp)₂; SrTiO₃; DRAM; chemical vapor deposition; atomic layer deposition