Direct Growth of Compound Semiconductor Nanowires by On-Film Formation of Nanowires: Bismuth Telluride

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• 作者：Jinhee Ham ; Wooyoung Shim ; Do Hyun Kim ; Seunghyun Lee ; Jongwook Roh ; Sung Woo Sohn ; Kyu Hwan Oh ; Peter W. Voorhees ; Wooyoung Lee
• 刊名：Nano Letters
• 出版年：2009
• 出版时间：August 12, 2009
• 年：2009
• 卷：9
• 期：8
• 页码：2867-2872
• 全文大小：249K
• 年卷期：v.9,no.8(August 12, 2009)
• ISSN：1530-6992

文摘

Bismuth telluride (Bi₂Te₃) nanowires are of great interest as nanoscale building blocks for high-efficiency thermoelectric devices. Their low-dimensional character leads to an enhanced figure-of-merit (ZT), an indicator of thermoelectric efficiency. Herein, we report the invention of a direct growth method termed On-Film Formation of Nanowires (OFF-ON) for making high-quality single-crystal compound semiconductor nanowires, that is, Bi₂Te₃, without the use of conventional templates, catalysts, or starting materials. We have used the OFF-ON technique to grow single crystal compound semiconductor Bi₂Te₃ nanowires from sputtered BiTe films after thermal annealing at 350 °C. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film. OFF-ON is a simple but powerful method for growing perfect single-crystal compound semiconductor nanowires of high aspect ratio with high crystallinity that distinguishes it from other competitive growth approaches that have been developed to date.