Dual Influence of Reduction Annealing on Diffused Hematite/FTO Junction for Enhanced Photoelectrochemical Water Oxidation

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• 作者：Xiaogang Yang ; Rui Liu ; Yan Lei ; Pinjiang Li ; Ke Wang ; Zhi Zheng ; Dunwei Wang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：June 29, 2016
• 年：2016
• 卷：8
• 期：25
• 页码：16476-16485
• 全文大小：635K
• 年卷期：0
• ISSN：1944-8252

文摘

Band structure engineering of the interface between the semiconductor and the conductive substrate may profoundly influence charge separation and transport for photovoltaic and photoelectrochemical devices. In this work, we found that a reduction-annealing treatment resulted in a diffused junction through enhanced interdiffusion of hematite/FTO at the interface. The activated hematite exhibited higher nanoelectric conductivity that was probed by a PeakForce TUNA AFM method. Furthermore, charge accumulation and recombination via surface states at the interface were dramatically reduced after the reduction-annealing activation, which was confirmed by transient surface photovoltage measurements. The diffused hematite junction promises improved photoelectrochemical performance without the need for a buffer layer.