Abnormal Temperature-Dependent Electron Transport in Hole Transport Material N,N鈥?Diphenyl-N,N鈥?bis(3- methylphenyl)-[1,1鈥?biphenyl]-4,4鈥?diamine (TPD)
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- 作者：Yun He ; Yongmao Hu ; Xiaoqing Chen ; Huan Peng ; Yintao You ; Qi Zeng ; Xindong Gao ; Xiaoyuan Hou
- 刊名：The Journal of Physical Chemistry C
- 出版年：2013
- 出版时间：May 9, 2013
- 年：2013
- 卷：117
- 期：18
- 页码：9143-9147
- 全文大小：363K
- 年卷期：v.117,no.18(May 9, 2013)
- ISSN：1932-7455
文摘
Charge transport is important both in the research and application of organic semiconductors. For hole transport materials, most works focus on the transport characteristics of holes while less attention is paid to that of electrons. In this study, electron currents in N,N鈥?diphenyl-N,N鈥?bis(3-methylphenyl)-[1,1鈥?biphenyl]-4,4鈥?diamine (TPD) thin films were studied. It is found that temperature dependence of electron conduction of TPD varies with driving voltage: in low voltage range, the electron conduction increases with temperature, while in the high voltage range it decreases abnormally with increasing temperature. Neither trapped-charge-limited current with exponential distribution of traps nor trap free space-charge-limited current with electric-field-dependent mobility could be used to interpret all the observed phenomena. The inability of current models to explain the phenomena indicates that the electron transport mechanism of TPD is different from that of holes.