Nanointerlayer Induced Electroluminescence Transition from Ultraviolet- to Red-Dominant Mode for n-Mn:ZnO/N-GaN Heterojunction

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• 作者：Hai Zhou ; Guojia Fang ; Qike Jiang ; Yongdan Zhu ; Nishuang Liu ; Xiao Zou ; Xiaoming Mo ; Yihe Liu ; Jianbo Wang ; Xianquan Meng ; Xingzhong Zhao
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2012
• 出版时间：May 23, 2012
• 年：2012
• 卷：4
• 期：5
• 页码：2521-2524
• 全文大小：289K
• 年卷期：v.4,no.5(May 23, 2012)
• ISSN：1944-8252

文摘

High-quality Mn:ZnO (MZO) film had been prepared on N-GaN coated sapphire substrates followed by postdeposition thermal annealing treatment at 700 掳C. For the annealed MZO/GaN heterojunction, a 15 nm cubic structural ZnGa₂O₄ layer was observed at the MZO/GaN interface through transmission electron microscope analysis. Through electroluminescence (EL) measurement, the formation of the nanointerface results in an EL transition from ultraviolet- to red-dominant mode for n-Mn:ZnO/N-GaN heterojunction light-emitting diodes (LEDs). The heterojunction LED showed a rectification ratio of 2.0 脳 10⁵ at 卤2 V, a dark current of 3.5 nA at 鈭? V and a quite strong red EL with a low turn-on voltage of 3 V. On the basis of the energy band diagram, we think the EL transition from ultraviolet- to red-dominant mode is mainly due to the formation of a thin oxide blocking nanolayer at the MZO/GaN interface during the annealing process.

Keywords:

red electroluminescence; Mn:ZnO; light-emitting diodes; low turn-on voltage; nano- interface; ultraviolet- to red-dominant