Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor

详细信息    查看全文

• 作者：Hien Thu Pham ; Jin Ho Yang ; Don-Sung Lee ; Byoung Hun Lee ; Hyun-Dam Jeong
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：March 23, 2016
• 年：2016
• 卷：8
• 期：11
• 页码：7248-7256
• 全文大小：631K
• ISSN：1944-8252

文摘

Barium titanate nanocrystals (BT NCs) were prepared under solvothermal conditions at 200 °C for 24 h. The shape of the BT NCs was tuned from nanodot to nanocube upon changing the polarity of the alcohol solvent, varying the nanosize in the range of 14–22 nm. Oleic acid-passivated NCs showed good solubility in a nonpolar solvent. The effect of size and shape of the BT NCs on the ferroelectric properties was also studied. The maximum polarization value of 7.2 μC/cm² was obtained for the BT-5 NC thin film. Dielectric measurements of the films showed comparable dielectric constant values of BT NCs over 1–100 kHz without significant loss. Furthermore, the bottom gate In₂O₃ NC thin film transistors exhibited outstanding device performance with a field-effect mobility of 11.1 cm² V^–1 s^–1 at a low applied gate voltage with BT-5 NC/SiO₂ as the gate dielectric. The low-density trapped state was observed at the interface between the In₂O₃ NC semiconductor and the BT-5 NCs/SiO₂ dielectric film. Furthermore, compensation of the applied gate field by an electric dipole-induced dipole field within the BT-5 NC film was also observed.