Equilibrium Chemical Vapor Deposition Growth of Bernal-Stacked Bilayer Graphene
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- 作者：Pei Zhao ; Sungjin Kim ; Xiao Chen ; Erik Einarsson ; Miao Wang ; Yenan Song ; Hongtao Wang ; Shohei Chiashi ; Rong Xiang ; Shigeo Maruyama
- 刊名：ACS Nano
- 出版年：2014
- 出版时间：November 25, 2014
- 年：2014
- 卷：8
- 期：11
- 页码：11631-11638
- 全文大小：545K
- ISSN：1936-086X
文摘
Using ethanol as the carbon source, self-limiting growth of AB-stacked bilayer graphene (BLG) has been achieved on Cu via an equilibrium chemical vapor deposition (CVD) process. We found that during this alcohol catalytic CVD (ACCVD) a source-gas pressure range exists to break the self-limitation of monolayer graphene on Cu, and at a certain equilibrium state it prefers to form uniform BLG with a high surface coverage of 鈭?4% and AB-stacking ratio of nearly 100%. More importantly, once the BLG is completed, this growth shows a self-limiting manner, and an extended ethanol flow time does not result in additional layers. We investigate the mechanism of this equilibrium BLG growth using isotopically labeled 13C-ethanol and selective surface aryl functionalization, and results reveal that during the equilibrium ACCVD process a continuous substitution of graphene flakes occurs to the as-formed graphene and the BLG growth follows a layer-by-layer epitaxy mechanism. These phenomena are significantly in contrast to those observed for previously reported BLG growth using methane as precursor.