Electrical Transport Properties of SnO under High Pressure

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• 作者：Junkai Zhang ; Yonghao Han ; Cailong Liu ; Wanbin Ren ; Yan Li ; Qinglin Wang ; Ningning Su ; Yuqiang Li ; Boheng Ma ; Yanzhang Ma ; Chunxiao Gao
• 刊名：Journal of Physical Chemistry C
• 出版年：2011
• 出版时间：October 27, 2011
• 年：2011
• 卷：115
• 期：42
• 页码：20710-20715
• 全文大小：884K
• 年卷期：v.115,no.42(October 27, 2011)
• ISSN：1932-7455

文摘

We carried out the accurate in situ Hall-effect measurements, the temperature dependence of electrical resistivity measurements and the first-principles calculations in SnO under high pressure. The results of Hall-effect measurements display the carrier transport behavior of SnO under pressure, which indicates that SnO undergoes a carrier-type inversion around 1.3 GPa and an underlying phase transition at 2鈥? GPa. In addition, the temperature dependence of electrical resistivity shows that SnO undergoes a semiconductor-to-metal transition around 5 GPa. The calculated band structures based on the first-principles method illustrate that the indirect band gap of SnO vanishes around 4 GPa. In particular, the results of total and partial density of states indicate that the closure of the indirect fundamental gap is mostly attributed to Sn-5s and 5p states hybridized with O-2p states at the Fermi level.