Study of Graphene-based 2D-Heterostructure Device Fabricated by All-Dry Transfer Process

详细信息    查看全文

• 作者：Dung Hoang Tien ; Jun-Young Park ; Ki Buem Kim ; Naesung Lee ; Taekjib Choi ; Philip Kim ; Takashi Taniguchi ; Kenji Watanabe ; Yongho Seo
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：February 10, 2016
• 年：2016
• 卷：8
• 期：5
• 页码：3072-3078
• 全文大小：440K
• ISSN：1944-8252

文摘

We developed a technique for transferring graphene and hexagonal boron nitride (hBN) in dry conditions for fabrication of van der Waals heterostructures. The graphene layer was encapsulated between two hBN layers so that it was kept intact during fabrication of the device. For comparison, we also fabricated the devices containing graphene on SiO₂/Si wafer and graphene on hBN. Electrical properties of the devices were investigated at room temperature. The mobility of the graphene on SiO₂ devices and graphene on hBN devices were 15?000 and 37?000 cm² V^–1 s^–1, respectively, while the mobility of the sandwich structure device reached the highest value of ～100?000 cm² V^–1 s^–1, at room temperature. The electrical measurements of the samples were carried out in air and vacuum environments. We found that the electrical properties of the encapsulated graphene devices remained at a similar level both in a vacuum and in air, whereas the properties of the graphene without encapsulation were influenced by the external environment.