Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures

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• 作者：Yanbin Li ; Jinsong Zhang ; Guangyuan Zheng ; Yongming Sun ; Seung Sae Hong ; Feng Xiong ; Shuang Wang ; Hye Ryoung Lee ; Yi Cui
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：November 24, 2015
• 年：2015
• 卷：9
• 期：11
• 页码：10916-10921
• 全文大小：424K
• ISSN：1936-086X

文摘

The heterostructured configuration between two-dimensional (2D) semiconductor materials has enabled the engineering of the band gap and the design of novel devices. So far, the synthesis of single-component topological insulator (TI) 2D materials such as Bi₂Se₃, Bi₂Te₃, and Sb₂Te₃ has been achieved through vapor phase growth and molecular beam epitaxy; however, the spatial controlled fabrication of 2D lateral heterostructures in these systems has not been demonstrated yet. Here, we report an in situ two-step synthesis process to form TI lateral heterostructures. Scanning transmission electron microscopy and energy-dispersive X-ray mapping results show the successful spatial control of chemical composition in these as-prepared heterostructures. The edge-induced growth mechanism is revealed by the ex situ atomic force microscope measurements. Electrical transport studies demonstrate the existence of p鈥搉 junctions in Bi₂Te₃/Sb₂Te₃ heterostructures.