Solution-Deposited Organic鈥揑norganic Hybrid Multilayer Gate Dielectrics. Design, Synthesis, Microstructures, and Electrical Properties with Thin-Film Transistors

详细信息    查看全文

• 作者：Young-geun Ha ; Jonathan D. Emery ; Michael J. Bedzyk ; Hakan Usta ; Antonio Facchetti ; Tobin J. Marks
• 刊名：Journal of the American Chemical Society
• 出版年：2011
• 出版时间：July 6, 2011
• 年：2011
• 卷：133
• 期：26
• 页码：10239-10250
• 全文大小：1255K
• 年卷期：v.133,no.26(July 6, 2011)
• ISSN：1520-5126

文摘

We report here on the rational synthesis, processing, and dielectric properties of novel layer-by-layer organic/inorganic hybrid multilayer dielectric films enabled by polarizable 蟺-electron phosphonic acid building blocks and ultrathin ZrO₂ layers. These new zirconia-based self-assembled nanodielectric (Zr-SAND) films (5鈥?2 nm thick) are readily fabricated via solution processes under ambient atmosphere. Attractive Zr-SAND properties include amenability to accurate control of film thickness, large-area uniformity, well-defined nanostructure, exceptionally large electrical capacitance (up to 750 nF/cm²), excellent insulating properties (leakage current densities as low as 10^鈥? A/cm²), and excellent thermal stability. Thin-film transistors (TFTs) fabricated with pentacene and PDIF-CN₂ as representative organic semiconductors and zinc鈥搕in鈥搊xide (Zn鈥揝n鈥揙) as a representative inorganic semiconductor function well at low voltages (<卤4.0 V). Furthermore, the TFT performance parameters of representative organic semiconductors deposited on Zr-SAND films, functionalized on the surface with various alkylphosphonic acid self-assembled monolayers, are investigated and shown to correlate closely with the alkylphosphonic acid chain dimensions.