Control of Threshold Voltage for Top-Gated Ambipolar Field-Effect Transistor by Gate Buffer Layer

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• 作者：Dongyoon Khim ; Eul-Yong Shin ; Yong Xu ; Won-Tae Park ; Sung-Ho Jin ; Yong-Young Noh
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：July 13, 2016
• 年：2016
• 卷：8
• 期：27
• 页码：17416-17420
• 全文大小：373K
• 年卷期：0
• ISSN：1944-8252

文摘

The threshold voltage and onset voltage for p-channel and n-channel regimes of solution-processed ambipolar organic transistors with top-gate/bottom-contact (TG/BC) geometry were effectively tuned by gate buffer layers in between the gate electrode and the dielectric. The work function of a pristine Al gate electrode (−4.1 eV) was modified by cesium carbonate and vanadium oxide to −2.1 and −5.1 eV, respectively, which could control the flat-band voltage, leading to a remarkable shift of transfer curves in both negative and positive gate voltage directions without any side effects. One important feature is that the mobility of transistors is not very sensitive to the gate buffer layer. This method is simple but useful for electronic devices where the threshold voltage should be precisely controlled, such as ambipolar circuits, memory devices, and light-emitting device applications.