Quasi-Free-Standing Epitaxial Graphene on SiC (0001) by Fluorine Intercalation from a Molecular Source

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• 作者：Swee Liang Wong ; Han Huang ; Yuzhan Wang ; Liang Cao ; Dongchen Qi ; Iman Santoso ; Wei Chen ; Andrew Thye Shen Wee
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：September 27, 2011
• 年：2011
• 卷：5
• 期：9
• 页码：7662-7668
• 全文大小：891K
• 年卷期：0
• ISSN：1936-086X

文摘

We demonstrated a novel method to obtain charge neutral quasi-free-standing graphene on SiC (0001) from the buffer layer using fluorine from a molecular source, fluorinated fullerene (C₆₀F₄₈). The intercalated product is stable under ambient conditions and resistant to elevated temperatures of up to 1200 °C. Scanning tunneling microscopy and spectroscopy measurements are performed for the first time on such quasi-free-standing graphene to elucidate changes in the electronic and structural properties of both the graphene and interfacial layer. Novel structures due to a highly localized perturbation caused by the presence of adsorbed fluorine were produced in the intercalation process and investigated. Photoemission spectroscopy is used to confirm these electronic and structural changes.