Graphene Ambipolar Nanoelectronics for High Noise Rejection Amplification

详细信息    查看全文

• 作者：Che-Hung Liu ; Qi Chen ; Chang-Hua Liu ; Zhaohui Zhong
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：February 10, 2016
• 年：2016
• 卷：16
• 期：2
• 页码：1064-1068
• 全文大小：427K
• ISSN：1530-6992

文摘

In a modern wireless communication system, signal amplification is critical for overcoming losses during multiple data transformations/processes and long-distance transmission. Common mode and differential mode are two fundamental amplification mechanisms, and they utilize totally different circuit configurations. In this paper, we report a new type of dual-gate graphene ambipolar device with capability of operating under both common and differential modes to realize signal amplification. The signal goes through two stages of modulation where the phase of signal can be individually modulated to be either in-phase or out-of-phase at two stages by exploiting the ambipolarity of graphene. As a result, both common and differential mode amplifications can be achieved within one single device, which is not possible in the conventional circuit configuration. In addition, a common-mode rejection ratio as high as 80 dB can be achieved, making it possible for low noise circuit application. These results open up new directions of graphene-based ambipolar electronics that greatly simplify the RF circuit complexity and the design of multifunction device operation.