Tunable Bandgap in Silicene and Germanene
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- 作者：Zeyuan Ni ; Qihang Liu ; Kechao Tang ; Jiaxin Zheng ; Jing Zhou ; Rui Qin ; Zhengxiang Gao ; Dapeng Yu ; Jing Lu
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：January 11, 2012
- 年：2012
- 卷：12
- 期：1
- 页码：113-118
- 全文大小：422K
- 年卷期：v.12,no.1(January 11, 2012)
- ISSN：1530-6992
文摘
By using ab initio calculations, we predict that a vertical electric field is able to open a band gap in semimetallic single-layer buckled silicene and germanene. The sizes of the band gap in both silicene and germanene increase linearly with the electric field strength. Ab initio quantum transport simulation of a dual-gated silicene field effect transistor confirms that the vertical electric field opens a transport gap, and a significant switching effect by an applied gate voltage is also observed. Therefore, biased single-layer silicene and germanene can work effectively at room temperature as field effect transistors.