Tunable GaTe-MoS2 van der Waals p鈥搉 Junctions with Novel Optoelectronic Performance

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• 作者：Feng Wang ; Zhenxing Wang ; Kai Xu ; Fengmei Wang ; Qisheng Wang ; Yun Huang ; Lei Yin ; Jun He
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：November 11, 2015
• 年：2015
• 卷：15
• 期：11
• 页码：7558-7566
• 全文大小：601K
• ISSN：1530-6992

文摘

P-n junctions based on vertically stacked van der Waals (vdW) materials have attracted a great deal of attention and may open up unforeseen opportunities in electronics and optoelectronics. However, due to the lack of intrinsic p-type vdW materials, most previous studies generally adopted electrical gating, special electrode contacts, or chemical doping methods to realize p-n vdW junctions. GaTe is an intrinsic p-type vdW material with a relatively high charge density, and it has a direct band gap that is independent of thickness. Here, we report the construction of ultrathin and tunable p-GaTe/n-MoS₂ vdW heterostructure with high photovoltaic and photodetecting performance. The rectification ratio, external quantum efficiency, and photoresponsivity are as high as 4 脳 10⁵, 61.68%, and 21.83 AW^鈥?, respectively. In particular, the detectivity is up to 8.4 脳 10¹³ Jones, which is even higher than commercial Si, InGaAs photodetectors. This study demonstrates the promising potential of p-GaTe/n-MoS₂ heterostructures for next-generation electronic and optoelectronic devices.