Shape and Doping Enhanced Field Emission Properties of Quasialigned 3C-SiC Nanowires

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• 作者：Xinni Zhang ; Youqiang Chen ; Zhipeng Xie ; Weiyou Yang
• 刊名：Journal of Physical Chemistry C
• 出版年：2010
• 出版时间：May 13, 2010
• 年：2010
• 卷：114
• 期：18
• 页码：8251-8255
• 全文大小：234K
• 年卷期：v.114,no.18(May 13, 2010)
• ISSN：1932-7455

文摘

We have reported the enhanced field emission properties of quasialigned 3C-SiC nanowires synthesized via catalyst assisted pyrolysis of polysilazane. The as-synthesized Al-doped SiC nanowires possess a tapered and bamboo-like structure with clear and tiny tips sized in several to tens of nanometers. The fabricated SiC nanowires have extremely low turn-on fields of 0.55−1.54 V μm⁻¹ with an average of 1 V μm⁻¹, which is the lowest one ever reported for any type of SiC emitters. The field-enhancement factor has been calculated to be 2983. The superior FE properties can be clearly attributed to the significant enhancements of the tapered and bamboo-like unique morphology and Al doping of SiC nanowires. Density functional theory calculations suggest that Al dopants in 3C-SiC nanowires could favor a more localized state near the Fermi energy, which improves the electron field emissions. We strongly believe that the present work will open a new insight in the fabrication of field emission sources with ultralow turn-on fields enhanced by both shape and doping.