Performance Boosting of Flexible ZnO UV Sensors with Rational Designed Absorbing Antireflection Layer and Humectant Encapsulation

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• 作者：Heng Zhang ; Youfan Hu ; Zongpeng Wang ; Zheyu Fang ; Lian-Mao Peng
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：January 13, 2016
• 年：2016
• 卷：8
• 期：1
• 页码：381-389
• 全文大小：613K
• ISSN：1944-8252

文摘

Flexible ZnO thin film UV sensors with 3 orders of magnitude improvement in sensitivity and 2 orders of magnitude acceleration in speed are realized via light absorption efficiency enhancement and surface encapsulation. Devices are constructed on polyethylene substrate incorporating morphology controlled ZnO nanorod arrays (NRAs) as absorbing antireflection layers. By adjusting the morphology of ZnO NRAs, the light absorptance exceeds 99% through effectively trapping incident photons. As a result, the sensitivity of the UV sensor reaches 109?000. Moreover, a mechanism of competitive chemisorption between O₂ and H₂O at oxygen vacancy sites is proposed to explain the phenomenon of the speed acceleration in moist environment. A new approach of humectant encapsulation is used to make H₂O participant rapid processes dominant for speed acceleration. Two orders of magnitude speed enhancement in reset time is achieved by polyethylene glycol encapsulation. After a total 3000 cycles bending test, the decay in the responsivity of UV sensor is within 20%, indicating good mechanical stability. All these results not only demonstrate a simple, effective and scalable approach to fabricate high sensitive and fast response flexible ZnO UV sensors, but also provide meaningful references for performance boosting of photoelectronic devices based on other oxide semiconductors.