Lithography-free Nanoscale Patterned Growth of GaAs on Si(001) with Sub-100-nm Silica Nanoparticles by Molecular Beam Epitaxy

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• 作者：S. C. Lee ; L. R. Dawson ; S. H. Huang ; S. R. J. Brueck
• 刊名：Crystal Growth & Design
• 出版年：2011
• 出版时间：September 7, 2011
• 年：2011
• 卷：11
• 期：9
• 页码：3673-3676
• 全文大小：770K
• 年卷期：v.11,no.9(September 7, 2011)
• ISSN：1528-7505

文摘

Lithography-free, nanoscale patterned, molecular beam epitaxial growth of GaAs on Si is demonstrated on a Si(001) substrate coated with a dense, single-particle-high, stack of 80-nm-diameter silica nanoparticles (NPs). The NP stack plays the role of a high aspect ratio, deep sub-100 nm opening area SiO<sub>2sub> pattern which is small enough for nanoscale patterned growth of large lattice-mismatched heterostructures. The GaAs, selectively grown through the interparticle spaces, proceeds over the NP stack initially with island formation and ultimately buries the NP stack by epitaxial lateral overgrowth and coalescence. X-ray diffraction confirms that the GaAs grown over the NP stack has highly improved crystallinity as compared with a reference growth on unpatterned Si. This is explained by necking of the defects propagating along {111} by the small opening, high aspect ratio characteristic of the NP stack.