19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

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• 作者：Xingtian Yin ; Corsin Battaglia ; Yongjing Lin ; Kevin Chen ; Mark Hettick ; Maxwell Zheng ; Cheng-Ying Chen ; Daisuke Kiriya ; Ali Javey
• 刊名：ACS Photonics
• 出版年：2014
• 出版时间：December 17, 2014
• 年：2014
• 卷：1
• 期：12
• 页码：1245-1250
• 全文大小：455K
• ISSN：2330-4022

文摘

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (鈭?0 nm) of amorphous TiO₂ deposited at 120 掳C by atomic layer deposition as the transparent electron-selective contact. The TiO₂ film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm² and a high power conversion efficiency of 19.2%.

Keywords:

InP photovoltaics; titanium dioxide; heterojunctions; selective contact