Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric

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• 作者：Biaolin Peng ; Qi Zhang ; Xing Li ; Tieyu Sun ; Huiqing Fan ; Shanming Ke ; Mao Ye ; Yu Wang ; Wei Lu ; Hanben Niu ; Xierong Zeng ; Haitao Huang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：June 24, 2015
• 年：2015
• 卷：7
• 期：24
• 页码：13512-13517
• 全文大小：435K
• ISSN：1944-8252

文摘

A highly textured (111)-oriented Pb_0.8Ba_0.2ZrO₃ (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiO_x/SiO₂/Si(100) substrate by using a sol鈥揼el method. A large recoverable energy storage density of 40.18 J/cm³ along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range.