Ordered Stacking Fault Arrays in Silicon Nanowires

详细信息    查看全文

• 作者：Francisco J. Lopez ; Eric R. Hemesath ; Lincoln J. Lauhon
• 刊名：Nano Letters
• 出版年：2009
• 出版时间：July 8, 2009
• 年：2009
• 卷：9
• 期：7
• 页码：2774-2779
• 全文大小：353K
• 年卷期：v.9,no.7(July 8, 2009)
• ISSN：1530-6992

文摘

Correlated Raman microscopy and transmission electron microscopy were used to study the ordering of {111} planar defects in individual silicon nanowires. Detailed electron diffraction and polarization-dependent Raman analysis of individual nanowires enabled assessments of the stacking fault distribution, which varied from random to periodic, with the latter giving rise to local domains of 2H and 9R polytypes rather than the 3C diamond cubic structure. Some controversies and inconsistencies concerning earlier reports of polytypes in Si nanowires were resolved.