Direct Measurements of Lateral Variations of Schottky Barrier Height Across 鈥淓nd-On鈥?Metal Contacts to Vertical Si Nanowires by Ballistic Electron Emission Microscopy

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• 作者：Wei Cai ; Yulu Che ; Jonathan P. Pelz ; Eric R. Hemesath ; Lincoln J. Lauhon
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：February 8, 2012
• 年：2012
• 卷：12
• 期：2
• 页码：694-698
• 全文大小：276K
• 年卷期：v.12,no.2(February 8, 2012)
• ISSN：1530-6992

文摘

Ballistic electron emission microscopy measurements on individual 鈥渆nd-on鈥?Au Schottky contacts to vertical Si nanowires (NWs) indicate that the local Schottky barrier height at the contact edge is 23 卤 3 meV lower than at the contact center. Finite-element electrostatic simulations suggest that this is due to a larger interface electric field at the contact edge resulting from (equilibrium) positive charge in Si/SiO₂ interface states near the Au/NW contact, induced by local band bending due to the high work function Au film.

Keywords:

Schottky barrier; Si nanowire; 鈥渆nd-on鈥?contact; interface states; nm resolution measurement