Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2-b][1]benzothiophene Semiconductor Layer

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• 作者：Atefeh Y. Amin ; Artoem Khassanov ; Knud Reuter ; Timo Meyer-Friedrichsen ; Marcus Halik
• 刊名：The Journal of the American Chemical Society
• 出版年：2012
• 出版时间：October 10, 2012
• 年：2012
• 卷：134
• 期：40
• 页码：16548-16550
• 全文大小：247K
• 年卷期：v.134,no.40(October 10, 2012)
• ISSN：1520-5126

文摘

An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C₁₃-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm²/(V路s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT 蟺-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.