Large-Area, Low-Voltage, Antiambipolar Heterojunctions from Solution-Processed Semiconductors

详细信息    查看全文

• 作者：Deep Jariwala ; Vinod K. Sangwan ; Jung-Woo Ted Seo ; Weichao Xu ; Jeremy Smith ; Chris H. Kim ; Lincoln J. Lauhon ; Tobin J. Marks ; Mark C. Hersam
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：January 14, 2015
• 年：2015
• 卷：15
• 期：1
• 页码：416-421
• 全文大小：382K
• ISSN：1530-6992

文摘

The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p鈥搉 heterojunctions exhibit antiambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies.