Fabrication and Characterization of Large-Area, Semiconducting Nanoperforated Graphene Materials

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• 作者：Myungwoong Kim ; Nathaniel S. Safron ; Eungnak Han ; Michael S. Arnold ; Padma Gopalan
• 刊名：Nano Letters
• 出版年：2010
• 出版时间：April 14, 2010
• 年：2010
• 卷：10
• 期：4
• 页码：1125-1131
• 全文大小：383K
• 年卷期：v.10,no.4(April 14, 2010)
• ISSN：1530-6992

文摘

We demonstrate the fabrication of nanoperforated graphene materials with sub-20-nm features using cylinder-forming diblock copolymer templates across >1 mm² areas. Hexagonal arrays of holes are etched into graphene membranes, and the remaining constrictions between holes interconnect forming a honeycomb structure. Quantum confinement, disorder, and localization effects modulate the electronic structure, opening an effective energy gap of 100 meV in the nanopatterned material. The field-effect conductivity can be modulated by 40× (200×) at room temperature (T = 105 K) as a result. A room temperature hole mobility of 1 cm² V⁻¹ s⁻¹ was measured in the fabricated nanoperforated graphene field effect transistors. This scalable strategy for modulating the electronic structure of graphene is expected to facilitate applications of graphene in electronics, optoelectronics, and sensing.