query-ui-1.10.2/base/jquery-ui.min.css"/> High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth - Nano Letters (ACS Publications) quiv="Content-Type" content="text/html; charset=UTF-8" /> quiv="Content-Style-Type" content="text/css"/> quiv="imagetoolbar" content="no"/> quid鈥搒olid (VLS) growth method. Long and uniform planar GaAs NWs were assembled in perfectly parallel arrays to form double-channel T-gated NW array-based high electron mobility transistors (HEMTs) with DC and RF performance surpassing those for all field-effect transistors (FETs) with VLS NWs, carbon nanotubes (CNTs), or graphene channels in-plane with the substrate. For a planar GaAs NW array-based HEMT with 150 nm gate length and 2 V drain bias, the on/off ratio (ION/IOFF), cutoff frequency (fT), and maximum oscillation frequency (fmax) are 104, 33, and 75 GHz, respectively. By characterizing more than 100 devices on a 1.5 脳 1.5 cm2 chip, we prove chip-level electrical uniformity of the planar NW array-based HEMTs and verify the feasibility of using this bottom-up planar NW technology for post-Si large-scale nanoelectronics." />