Piezoelectric-Potential-Controlled Polarity-Reversible Schottky Diodes and Switches of ZnO Wires
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- 作者：Jun Zhou ; Peng Fei ; Yudong Gu ; Wenjie Mai ; Yifan Gao ; Rusen Yang ; Gang Bao ; Zhong Lin Wang
- 刊名：Nano Letters
- 出版年：2008
- 出版时间：November 12, 2008
- 年：2008
- 卷：8
- 期：11
- 页码：3973-3977
- 全文大小：245K
- 年卷期：v.8,no.11(November 12, 2008)
- ISSN：1530-6992
文摘
Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in I−V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop along the PFW, which have been quantified using the thermionic emission−diffusion theory. A new piezotronic switch device with an “on” and “off” ratio of ∼120 has been demonstrated. This work demonstrates a novel approach for fabricating diodes and switches that rely on a strain governed piezoelectric-semiconductor coupling process.