文摘
Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological insulator Bi2Te3 thin films with arrayed antidot nanostructures. With increasing density of the antidots, a systematic decrease is observed in the slope of the logarithmic temperature-dependent conductivity curves, indicating the electron鈥揺lectron interaction can be tuned by the antidots. Meanwhile, the weak antilocalization effect revealed in magnetoconductivity exhibits an enhanced dominance of electron鈥揺lectron interaction among decoherence mechanisms. The observation can be understood from an antidot-induced reduction of the effective dielectric constant, which controls the interactions between the surface electrons. Our results clarify the indispensable role of the electron鈥揺lectron interaction in the localization of surface electrons and indicate the localization of surface electrons in an interacting topological insulator.
Keywords:
topological insulator; surface states; antidot; electron鈭抏lectron interaction; weak antilocalization effect