Gate-Controlled Surface Conduction in Na-Doped Bi2Te3 Topological Insulator Nanoplates

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• 作者：Yong Wang ; Faxian Xiu ; Lina Cheng ; Liang He ; Murong Lang ; Jianshi Tang ; Xufeng Kou ; Xinxin Yu ; Xiaowei Jiang ; Zhigang Chen ; Jin Zou ; Kang L. Wang
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：March 14, 2012
• 年：2012
• 卷：12
• 期：3
• 页码：1170-1175
• 全文大小：353K
• 年卷期：v.12,no.3(March 14, 2012)
• ISSN：1530-6992

文摘

Exploring exciting and exotic physics, scientists are pursuing practical device applications for topological insulators. The Dirac-like surface states in topological insulators are protected by the time-reversal symmetry, which naturally forbids backscattering events during the carrier transport process, and therefore offers promising applications in dissipationless spintronic devices. Although considerable efforts have been devoted to controlling their surface conduction, limited work has been focused on tuning surface states and bulk carriers in Bi₂Te₃ nanostructures by external field. Here we report gate-tunable surface conduction in Na-doped Bi₂Te₃ topological insulator nanoplates. Significantly, by applying external gate voltages, such topological insulators can be tuned from p-type to n-type. Our results render a promise in finding novel topological insulators with enhanced surface states.

Keywords:

Topological insulator; bismuth telluride; sodium doping; surface states; field-effect transistor