Thermodynamic Study on Diffusion Growth of Ga3+-Doped LiNbO3 Single Crystal Thin Film for Photonic Application

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• 作者：De-Long Zhang ; Qun Zhang ; Jian Kang ; Wing-Han Wong ; Dao-Yin Yu ; Edwin Yue-Bun Pun
• 刊名：Crystal Growth & Design
• 出版年：2016
• 出版时间：March 2, 2016
• 年：2016
• 卷：16
• 期：3
• 页码：1300-1305
• 全文大小：343K
• ISSN：1528-7505

文摘

A thermodynamic study was performed on the growth of Ga³⁺-doped LiNbO₃ (LN) thin film. Some Ga³⁺-doped LN thin films were grown on the LN surface by thermal diffusion of Ga₂O₃ film in the temperature range of 1000–1100 °C. After growth, the Ga³⁺ ion in the grown thin film was profiled, and its diffusion-growth characteristics were studied. The temperature dependences of diffusion-growth coefficient and solubility were quantified. These dependences are crucial to the design and growth of a Ga³⁺-doped LN thin film for various photonic applications. A comparison with the case of Ti⁴⁺ diffusion-growth, which induces an increase of LN refractive index and hence formation of an optical waveguide, shows that Ga³⁺ grows considerably faster than Ti⁴⁺ because of its smaller ionic radius. In addition, Ga³⁺-doping contribution to LN refractive index was studied by measuring and comparing the refractive indices at Ga³⁺-grown and Ga³⁺-free parts of the crystal surface. The results show that the contribution is small.