Energetic, Optical, and Electronic Properties of Intrinsic Electron-Trapping Defects in YAlO3: A Hybrid DFT Study
文摘
The formation energies of cation antisite defects (YAl and AlY), oxygen vacancies (VO), and nearest-neighbor defect complexes (YAl鈥揂lY and YAl鈥揤O) in various charge states in the YAlO3 crystal are calculated using density functional theory (DFT) with a modified PBE0 hybrid functional containing 32% Hartree鈥揊ock (HF) exchange. It is found that the formation of YAl is more energetically favorable than AlY under oxygen-poor condition, consistent with the fact that the latter was not observed in experiments. On the basis of calculated optical transition energies associated with the excitons trapped at YAl, VO, and YAl鈥揤O, the two emission bands observed under excitonic excitation at low temperature are identified. Electronic properties of YAl鈥揤O complexes in the neutral and singly negative charge states are finally investigated. It shows that the extra electron added into the negative charge state is mainly localized at 4d orbitals of YAl with a two-component feature of its density distribution extending axially along the YAl鈥揤O direction.