Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at \(1.55\,\upmu \mathrm{m}\)

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• 作者：Rikmantra Basu (1)
  Vedatrayee Chakraborty (2)
  Bratati Mukhopadhyay (2)
  P. K. Basu (2) (3)
  
  1. EEE Department ; BITS Pilani ; Pilani Campus ; Rajasthan聽 ; 333031 ; India
  2. Institute of Radio Physics and Electronics ; University of Calcutta ; 92 Acharya Prafulla Chandra Road ; Kolkata聽 ; 700009 ; India
  3. UGC BSR Faculty Fellow ; UGC ; Government of India ; New Delhi ; India
  
• 关键词：Hetero junction bipolar transistor ; Photodetector ; Hetero ; phototransistor ; Electrical gain ; Optical gain ; Responsivity
• 刊名：Optical and Quantum Electronics
• 出版年：2015
• 出版时间：February 2015
• 年：2015
• 卷：47
• 期：2
• 页码：387-399
• 全文大小：497 KB
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• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

Alloys of Ge and Sn grown on Si platform show about tenfold increase in the absorption over Ge at C and L-bands due to the direct nature of the band gap in GeSn. This led us to propose a Ge/GeSn/GeSn heterophototransistor (HPT) structure on a Si-platform and to calculate the terminal currents, current gain, optical gain and responsivity of the device at \(1.55\,\upmu \mathrm{m}\) . The model developed by Frimel and Roenker for HPTs with InGaAs base is used. In the model, the carrier density in the base is obtained by matching the diffusion-limited current with the current due to thermionic emission and tunneling across the emitter-base heterobarrier, and also considering the carrier density at the collector-end limited by the saturation drift velocity. The contribution of holes to the current is also included. The resulting carrier distribution is used to express the terminal currents and calculate the values of gain. The band gap for GeSn and the band discontinuity in the heterobarrier are calculated by using model solid theory. The calculated values for the GeSn HPT are found to be comparable with and even better than the corresponding values for the InP/InGaAs/InGaAs Npn device for lower values of the base thickness and the base doping.