On-Demand Fabrication of Si/SiO₂ Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal Oxidation

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• 作者：Huaxiang Cao ; Xinhua Li ; Bukang Zhou ; Tao Chen ; Tongfei Shi&#8230
• 关键词：Nanosphere lithography ; Metal ; assisted chemical etching (MACE) ; Nanowire arrays ; Thermal oxidation
• 刊名：Nanoscale Research Letters
• 出版年：2017
• 出版时间：December 2017
• 年：2017
• 卷：12
• 期：1
• 全文大小：1042KB
• 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
• 出版者：Springer US
• ISSN：1556-276X
• 卷排序：12

文摘

We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO₂ nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO₂ nanowire (NW) arrays, two critical issues relating with the size control of polystyrene reduction and oxide thickness evolution are investigated. Through analyzing the morphology evolutions of polystyrene particles, we give a quantitative description on the diameter variations of polystyrene particles with the etching time of plasma etching. Based on this, pure Si NW arrays with controllable geometry are generated. Then the oxide dynamic of Si NW is analyzed by the extended Deal-Grove model. By control, the initial Si NWs and the thermal oxidation time, the well-aligned Si/SiO₂ composite NW arrays with controllable geometry are obtained.