An HEMT-Based Cryogenic Charge Amplifier for Sub-kelvin Semiconductor Radiation Detectors

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• 作者：A. Phipps ; B. Sadoulet ; A. Juillard ; Y. Jin
• 刊名：Journal of Low Temperature Physics
• 出版年：2016
• 出版时间：July 2016
• 年：2016
• 卷：184
• 期：1-2
• 页码：505-511
• 全文大小：799 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Characterization and Evaluation Materials
  Magnetism and Magnetic Materials
  
• 出版者：Springer Netherlands
• ISSN：1573-7357
• 卷排序：184

文摘

We present the design and noise performance of a fully cryogenic (\(T=4\) K) high-electron mobility transistor (HEMT)-based charge amplifier for readout of sub-kelvin semiconductor radiation detectors. The amplifier is being developed for use in direct detection dark matter searches such as the cryogenic dark matter search and will allow these experiments to probe weakly interacting massive particle masses below 10 GeV/\(c^2\) while retaining background discrimination. The amplifier dissipates \(\approx \)1 mW of power and provides an open loop voltage gain of several hundreds. The measured noise performance is better than that of JFET-based charge amplifiers and is dominated by the noise of the input HEMT. An optimal filter calculation using the measured closed loop noise and typical detector characteristics predicts a charge resolution of \(\sigma _q\)=106 eV (35 electrons) for leakage currents below \(4 \times 10^{-15}\) A.KeywordsHEMTCharge amplifierCryogenic electronicsDark matterRadiation detectors