Three-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage

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• 作者：Lian-Jie Li (1)
  Bao Zhu (1)
  Shi-Jin Ding (1)
  Hong-Liang Lu (1)
  Qing-Qing Sun (1)
  Anquan Jiang (1)
  David Wei Zhang (1)
  Chunxiang Zhu (2)
  
• 关键词：Nanocapacitor arrays ; AAO ; Capacitance density ; RC time constant ; Energy storage
• 刊名：Nanoscale Research Letters
• 出版年：2012
• 出版时间：December 2012
• 年：2012
• 卷：7
• 期：1
• 全文大小：377KB
• 参考文献：1. Tian BZ, Zheng XL, Kempa TJ, Fang Y, Yu N, Yu G, Huang J, Lieber CM: Coaxial silicon nanowires as solar cells and nanoelectronic power sources. / Nature 2007, 449:885-90. CrossRef
  2. Wang X, Summers CJ, Wang ZL: Large-scale hexagonal-patterned growth of aligned ZnO nanorods for nano-optoelectronics and nanosensor arrays. / Nano Lett 2004, 4:423-26. CrossRef
  3. Albert FJ, Emley NC, Myers EB, Ralph DC, Buhrman RA: Quantitative study of magnetization reversal by spin-polarized current in magnetic multilayer nanopillars. / Phys Rev Lett 2002,89(1-):226802. CrossRef
  4. Roddaro S, Nilsson K, Astromskas G, Samuelson L, Wernersson LE, Karlstr?m O, Wacker A: InAs nanowire metal-oxide-semiconductor capacitors. / Appl Phys Lett 2008,92(1-):253509. CrossRef
  5. Chang SW, Oh JH, Boles ST, Thompson CV: Fabrication of silicon nanopillar-based nanocapacitor arrays. / Appl Phys Lett 2010,96(1-):153108. CrossRef
  6. Shelimov KB, Davydov DN, Moskovits M: Template-grown high-density nanocapacitor arrays. / Appl Phys Lett 2000, 77:1722-724. CrossRef
  7. Banerjee P, Perez I, Henn-Lecordier L, Lee SB, Rubloff GW: Nanotubular metal–insulator–metal capacitor arrays for energy storage. / Nat Nanotechnol 2009, 4:292-96. CrossRef
  8. Pastore I, Poplausks R, Apsite I, Pastare I, Lombardi F, Erts D: Fabrication of ultra thin anodic aluminium oxide membranes by low anodization voltages. / Mater Sci Eng 2011,23(1-):012025.
  9. Tseng CA, Lin JC, Chang YF, Chyou SD, Peng KC: Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets. / Appl Surf Sci 2012, 258:5996-002. CrossRef
  10. Hu X, Ling Z, Wang K, Li Y: Fabrication of three dimensional interconnected porous carbons from branched anodic aluminum oxide template. / Electrochem Commun 2011, 13:1082-085. CrossRef
  11. Pan TM, Hsieh CI, Huang TY, Yang JR, Kuo PS: Good high-temperature stability of TiN/Al2O3/WN/TiN capacitors. / IEEE Electron Device Lett. 2007, 28:954-56. CrossRef
  12. Hourdakis E, Nassiopoulou AG: High-density MIM capacitors with porous anodic alumina dielectric. / IEEE Trans. Electron Devices 2010, 57:2679-683. CrossRef
  13. Chen SB, Lai CH, Chin A, Hsieh JC, Liu J: High-density MIM capacitors using Al2O3 and AlTiOx dielectrics. / IEEE Electron Device LETT. 2002, 23:185-87. CrossRef
  14. Allers KH, Brenner P, Schrenk M: Dielectric reliability and material properties of A12O3in metal insulator metal capacitors (MIMCAP) for RF bipolar technologies in comparison to SiO2, SiN and Ta2O5. / IEEE BCTM 2003,3(2):35-8.
  15. Hu H, Zhu CX, Yu X, Li MF, Cho BJ, Kwong DL, Foo PD, Yu MB, Liu X, Winkler J: MIM capacitors using atomic-layer-deposited high-κ (HfO2)1?x(Al2O3)x dielectrics. / IEEE Electron Device Lett. 2003, 24:60-2. CrossRef
  16. Haspert LC, Lee SB, Rubloff GW: Nanoengineering strategies for metal-insulator-metal electrostatic nanocapacitors. / ACS Nano 2012, 6:3528-536. CrossRef
  17. Conway BE: / Electrochemical Supercapacitors: Scientific Fundamentals and Technological Applications. New York: Springer; 1999.
  
• 作者单位：Lian-Jie Li (1)
  Bao Zhu (1)
  Shi-Jin Ding (1)
  Hong-Liang Lu (1)
  Qing-Qing Sun (1)
  Anquan Jiang (1)
  David Wei Zhang (1)
  Chunxiang Zhu (2)
  
  1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, People’s Republic of China
  2. Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 119260, Singapore
  
• ISSN：1556-276X

文摘

High density three-dimensional AZO/Al2O3/AZO nanocapacitor arrays have been fabricated for energy storage applications. Using atomic layer deposition technique, the stack of AZO/Al2O3/AZO has been grown in the porous anodic alumina template which is directly formed on the Si substrate. The fabricated capacitor shows a high capacitance density of 15.3 fF/μm2 at 100 kHz, which is nearly 2.5 times over the planar capacitor under identical conditions in theory. Further, the charge-discharge characteristics of the capacitor are characterized, indicating that the resistance-capacitance time constants are equal to 300 ns for the charging and discharging processes, and have no dependence on the voltage supply. This reflects good power characteristics of the electrostatic capacitor.