刊名:Journal of Materials Science: Materials in Electronics
出版年:2014
出版时间:September 2014
年:2014
卷:25
期:9
页码:3984-3989
全文大小:840 KB
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作者单位:N. Mythili (1) K. T. Arulmozhi (2)
1. Department of Physics, Annamalai University, Annamalai Nagar, Chidambaram, 608002, Tamil Nadu, India 2. Physics Wing (DDE), Annamalai University, Annamalai Nagar, Chidambaram, 608002, Tamil Nadu, India
ISSN:1573-482X
文摘
Zinc (Zn) doped lead oxide (PbO) nanoparticles were synthesized with different doping concentrations of Zn by chemical precipitation method. X-ray diffraction results show evidence of the shift in 2θ values towards higher angle, which indicates the substitution of Zn2+ atoms into the Pb2+ lattice sites. Morphology of the samples was analyzed by high resolution-transmission electron microscopy and SAED pattern reveals the crystalline nature of the sample. Zn atoms create impurity energy levels in the PbO and this was confirmed by the energy gap values in ultraviolet visible spectroscopy spectra. The defect levels of the samples were analyzed by photoluminescence spectroscopy. The results indicated that 0.1?M Zn doping on PbO seems to be the minimum optimum concentration to yield well defined crystallinity with modified optical properties and it can be used in preparing photoluminescent material.