Vapor-phase-processed fluorinated self-assembled monolayer for organic thin-film transistors

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• 作者：Jeongkyun Roh ; Changhee Lee ; Jeonghun Kwak…
• 关键词：Organic thin film transistors ; Self ; assembled monolayer ; Bias stability
• 刊名：Journal of the Korean Physical Society
• 出版年：2015
• 出版时间：September 2015
• 年：2015
• 卷：67
• 期：5
• 页码：941-945
• 全文大小：793 KB
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• 作者单位：Jeongkyun Roh (1)
  Changhee Lee (1)
  Jeonghun Kwak (2)
  Byung Jun Jung (3)
  Hyeok Kim (4) (5)
  
  1. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, 151-742, Korea
  2. School of Electrical and Computer Engineering, The University of Seoul, Seoul, 130-743, Korea
  3. Department of Materials Science and Engineering, The University of Seoul, Seoul, 130-743, Korea
  4. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, 151-742, Korea
  5. Construction Equipment Technology Center, Korea Institute of Industrial Technology (KITECH), Gyeongsan, 712-702, Korea
  
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

A vapor-phase-processed fluorinated silazane self-assembled monolayer (SAM), 1,3-bis(trifluoropropyl)-1,1,3,3-tetramethyldisilazane (FPDS), was introduced as a surface modifier for pentacene-based organic thin-film transistors (OTFTs). A remarkable improvement in the field effect mobility from 0.25 cm2/Vs (without SAM-treatment) to 0.42 cm2/Vs (with FPDS-treatment) was observed, which was attributed to the better pentacene growth on a hydrophobic surface. A significant reduction in the contact resistance was also observed by FPDS treatment due to the improved bulk conductivity and diminished charge trapping at the gate dielectric surface by the SAM treatment. In addition, FPDS treatment efficiently improved the bias stability of the OTFTs; the drain-to-source current degradation by the bias stress was greatly reduced from 80% to 50% by FPDS treatment, and the characteristic time for charge trapping of the FPDS treated OTFTs was approximately one order of magnitude larger than that of the OTFTs without SAM treatment. Keywords Organic thin film transistors Self-assembled monolayer Bias stability