Effect of annealing time on the structural and ferromagnetic properties of the GaMnN thin films

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• 作者：Xingguo Gao (1) (2)
  Baoyuan Man (1)
  Mei Liu (1)
  Cheng Yang (1)
  Chuansong Chen (1)
  
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2014
• 出版时间：March 2014
• 年：2014
• 卷：114
• 期：3
• 页码：1003-1007
• 全文大小：386 KB
• 参考文献：1. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Science 287, 1019 (2000) CrossRef
  2. J.M. Baik, H.W. Jang, J.K. Kim, J.L. Lee, Appl. Phys. Lett. 82, 583 (2003) CrossRef
  3. M.H. Kane, A. Asghar, Q. Song, S. Gupta, Z.J. Zhang, C.J. Summers, I.T. Ferguson, M. Strassburg, J. Senawiratne, N. Dietz, C. Hums, U. Haboeck, A. Hoffmann, D. Azamat, W. Gehlhoff, Proc. SPIE 5732, 389 (2005) CrossRef
  4. X.G. Cui, Z.K. Tao, R. Zhang, X. Li, X.Q. Xiu, Z.L. Xie, S.L. Gu, P. Han, Y. Shi, Y.D. Zheng, Appl. Phys. Lett. 92, 152116 (2008) CrossRef
  5. X.G. Gao, C. Liu, C.H. Yin, L.L. Sun, D.Y. Tao, C. Yang, B.Y. Man, J. Magn. Magn. Mater. 343, 65 (2013) CrossRef
  6. G. Kunert, S. Dobkowska, T. Li, H. Reuther, C. Kruse, S. Figge, R. Jakiela, A. Bonanni, J. Grenzer, W. Stefanowicz, J.V. Borany, M. Sawicki, T. Dietl, D. Hommel, Appl. Phys. Lett. 101, 022413 (2012) CrossRef
  7. M. Sawicki, T. Devillers, S. Ga??ski, C. Simserides, S. Dobkowska, B. Faina, A. Grois, A. Navarro-Quezada, K.N. Trohidou, J.A. Majewski, T. Dietl, A. Bonanni, Phys. Rev. B 85, 205204 (2012) CrossRef
  8. S. Stefanowicz, G. Kunert, C. Simserides, J.A. Majewski, W. Stefanowicz, C. Kruse, S. Figge, T. Li, R. Jakie?a, K.N. Trohidou, A. Bonanni, D. Hommel, M. Sawicki, T. Dietl, (2013). arXiv:1306.5141 [cond-mat.dis-nn]
  9. A. Bonanni, M. Sawicki, T. Devillers, W. Stefanowicz, B. Faina, T. Li, T.E. Winkler, D. Sztenkiel, A. Navarro-Quezada, M. Rovezzi, R. Jakie?a, A. Grois, M. Wegscheider, W. Jantsch, J. Suffczyński, F. D’Acapito, A. Meingast, G. Kothleitner, T. Dietl, Phys. Rev. B 84, 035206 (2011) CrossRef
  10. B. Hu, B.Y. Man, C. Yang, M. Liu, C.S. Chen, X.G. Gao, S.C. Xu, C.C. Wang, Z.C. Sun, Appl. Surf. Sci. 258, 525 (2011) CrossRef
  11. S. Dhar, T. Kammermeier, A. Ney, L. Pérez, K.H. Ploog, A. Melnikov, A.D. Wieck, Appl. Phys. Lett. 89, 062503 (2006) CrossRef
  12. L.L. Sun, F.W. Yan, H.X. Zhang, J.X. Wang, G.H. Wang, Y.P. Zeng, J.M. Li, Appl. Surf. Sci. 255, 7451 (2009) CrossRef
  13. M.L. Reed, M.K. Ritums, H.H. Stadelmaier, M.J. Reed, C.A. Parker, S.M. Bedair, N.A. El-Masry, Mater. Lett. 51, 500 (2001) CrossRef
  14. M. Aoki, H. Yamane, M. Shimada, S. Sarayama, H. Iwata, F.J. Disalvo, Jpn. J. Appl. Phys. 42, 5445 (2003) CrossRef
  15. D. Chen, Z. Ding, S. Yao, W. Hua, K. Wang, T. Chen, Nucl. Instrum. Methods Phys. Res. B 266, 2797 (2008) CrossRef
  16. M. Hemissi, H. Amardjia-Adnani, J.C. Plenet, B. Canut, J.M. Pelletier, Rev. énerg. Renouv. 10, 273 (2007)
  17. S.J. Potashnik, K.C. Ku, S.H. Chun, J.J. Berry, N. Samarth, P. Schiffer, Appl. Phys. Lett. 79, 1495 (2001) CrossRef
  18. D. O’Mahony, F. McGee, M. Venkatesan, J.G. Lunne, J.M.D. Coey, Superlattices Microstruct. 36, 403 (2004) CrossRef
  19. S.P. Kowalczyk, L. Ley, F.R. McFeely, D.A. Shirley, Phys. Rev. B 11, 1721 (1975) CrossRef
  20. C.H. Choi, S.H. Kim, M.H. Jung, J. Magn. Magn. Mater. 321, 3833 (2009) CrossRef
  21. M.R. Islam, N.F. Chen, M. Yamada, Mater. Sci. Semicond. Process. 9, 184 (2006) CrossRef
  22. X.Q. Xiu, R. Zhang, B.B. Li, Z.L. Xie, L. Chen, B. Liu, P. Han, S.L. Gu, Y. Shi, Y.D. Zheng, J. Cryst. Growth 292, 212 (2006) CrossRef
  23. X.L. Yang, J.J. Wu, Z.T. Chen, Y.B. Pan, Y. Zhang, Z.J. Yang, T.J. Yu, G.Y. Zhang, Solid State Commun. 143, 236 (2007) CrossRef
  24. M. Asghar, I. Hussain, F. Saleemi, E. Bustarret, J. Cibert, S. Kuroda, S. Marcet, H. Mariette, A.S. Bhatti, Mater. Sci. Eng. B-Solid 133, 102 (2006) CrossRef
  25. W. Gebicki, J. Strzeszewski, G. Kamler, T. Szyszko, S. Podsiado, Appl. Phys. Lett. 76, 3870 (2000) CrossRef
  26. T. Graf, M. Gjukic, M.S. Brandt, M. Stutzmann, O. Ambacher, Appl. Phys. Lett. 81, 5159 (2002) CrossRef
  27. T.C. Kaspar, T. Droubay, S.M. Heald, M.H. Engelhard, P. Nachimuthu, S.A. Chambers, Phys. Rev. B 77, 201303(R) (2008) CrossRef
  28. A. Ney, Materials 3, 3565 (2010) CrossRef
  29. J.M.D. Coey, M. Venkatesan, C.B. Fitzgerald, Nat. Mater. 4, 173 (2005) CrossRef
  30. D.C. Look, D.C. Reynolds, J.W. Hemsky, J.R. Sizelove, R.L. Jones, R.J. Molnar, Phys. Rev. Lett. 79, 2273 (1997) CrossRef
  
• 作者单位：Xingguo Gao (1) (2)
  Baoyuan Man (1)
  Mei Liu (1)
  Cheng Yang (1)
  Chuansong Chen (1)
  
  1. College of Physics and Electronics, Shandong Normal University, Jinan, 250014, P.R. China
  2. School of Science, Qilu University of Technology, Jinan, 250353, P.R. China
  
• ISSN：1432-0630

文摘

GaMnN thin films were deposited on a sapphire (0001) substrate by using laser assisted molecular beam epitaxy. Subsequently, the samples were annealed in the ammonia ambience at 1000?°C for different time lengths. The crystalline quality was improved gradually, and the room temperature ferromagnetism of our samples becomes stronger with the increase of the annealing time within 25?min. The X-ray photoelectron spectra analysis confirmed that the Mn3+ concentration in the GaMnN films increased after annealing. The stronger ferromagnetism was observed in the sample with the higher Mn3+ concentration. However, too long annealing time, such as 35?min, will lead to the degradation of the crystalline quality and the decrease of Mn3+ concentration, which results in the weakened ferromagnetism. The optimal annealing time is 25?min at 1000?°C in our experiments. Finally, the origin of the room temperature ferromagnetism in our samples was discussed preliminarily.