Superior dielectric tunability of high-valence W6+-doped Na0.5Bi0.5TiO3 thin films
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- 作者：Xiaomei Jiang ; Changhong Yang ; Panpan Lv…
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：28
- 期：2
- 页码：1433-1437
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
- 出版者：Springer US
- ISSN：1573-482X
- 卷排序：28
文摘
Na0.5Bi0.5TiO3 (NBT) and Na0.5Bi0.5Ti1−xWxO3+δ (NBTWx, x = 0.005, 0.010, 0.020) thin films were successfully fabricated on indium tin oxide (ITO)/glass substrates via a modified sol–gel method annealed at 600 °C. The effects of W6+ doping content on crystalline structure, surface morphology and electrical properties were studied in detail. All the films can be crystallized into phase-pure perovskite structures and possess smooth surfaces without any cracks. Compared with the NBT, each NBTWx thin film exhibits an obvious decrease of leakage current density and enhanced dielectric properties. A large dielectric tunability (62 %) which is comparable to that of lead-based ones (such as PZT) is achieved in NBTW0.010 sample at the frequency of 100 kHz, which can be attributed to the inhibition effect of the appropriate concentration of W6+ on the formation of oxygen vacancies. These results suggest that high-valence-ion substitution of W6+ ion for Ti4+ ion can significantly optimize the electrical properties of NBT-based thin films.