Simulation and structure optimization of triboelectric nanogenerators considering the effects of parasitic capacitance

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• 作者：Keren Dai ; Xiaofeng Wang ; Simiao Niu ; Fang Yi ; Yajiang Yin ; Long Chen…
• 关键词：triboelectric nanogenerator ; parasitic capacitance ; figure of merit ; structure optimization ; performance optimization
• 刊名：Nano Research
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：10
• 期：1
• 页码：157-171
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Nanotechnology; Materials Science, general; Atomic/Molecular Structure and Spectra; Condensed Matter Physics; Biotechnology; Biomedicine, general;
• 出版者：Tsinghua University Press
• ISSN：1998-0000
• 卷排序：10

文摘

Parasitic capacitance is an unavoidable and usually unwanted capacitance that exists in electric circuits, and it is the most important second-order non-ideal effect that must be considered while designing a triboelectric nanogenerator (TENG) because its magnitude is comparable to the magnitude of the TENG capacitance. This paper investigates the structure and performance optimization of TENGs through modeling and simulation, taking the parasitic capacitance into account. Parasitic capacitance is generally found to cause severe performance degradation in TENGs, and its effects on the optimum matching resistance, maximum output power, and structural figures-of-merit (FOMs) of TENGs are thoroughly investigated and discussed. Optimum values of important structural parameters such as the gap and electrode length are determined for the different working modes of TENGs, systematically demonstrating how these optimum structural parameters change as functions of the parasitic capacitance. Additionally, it is demonstrated that the parasitic capacitance can improve the height tolerance of the metal freestanding-mode TENGs. This work provides a theoretical foundation for the structure and performance optimization of TENGs for practical applications and promotes the development of mechanical energy-harvesting techniques.