Dopant in Near-Surface Semiconductor Layers of Metal–Insulator–Semiconductor Structures Based on Graded-Gap p-Hg0.78Cd0.22Te Grown by Molecular-Beam Epitaxy
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- 作者：A. V. Voitsekhovskii ; S. N. Nesmelov ; S. M. Dzyadukh
- 关键词：MIS structure ; HgCdTe ; molecular beam epitaxy ; graded ; gap layer ; capacitance–voltage characteristic ; dopant concentration
- 刊名：Journal of Electronic Materials
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：45
- 期：2
- 页码：881-891
- 全文大小：1,386 KB
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S. N. Nesmelov (1) (2)
S. M. Dzyadukh (1) (2)
1. National Research Tomsk State University, 36 Lenina Ave., 634050, Tomsk, Russia
2. Siberian Physical-Technical Institute TSU, 1 Novosobornaya Sq., 634050, Tomsk, Russia - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials
Electronics, Microelectronics and Instrumentation
Solid State Physics and Spectroscopy - 出版者：Springer Boston
- ISSN：1543-186X
文摘
Peculiarities in determining the dopant concentration and dopant distribution profile in the near-surface layer of a semiconductor are investigated by measuring the admittance of metal–insulator–semiconductor structures (MIS structures) based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy. The dopant concentrations in the near-surface layer of the semiconductor are determined by measuring the admittance of MIS structures in the frequency range of 50 kHz to 1 MHz. It is shown that in this frequency range, the capacitance–voltage characteristics of MIS structures based on p-Hg0.78Cd0.22Te with a near-surface graded gap layer demonstrate a high-frequency behavior with respect to the recharge time of surface states located near the Fermi level for an intrinsic semiconductor. The formation time of the inversion layer is decreased by less than two times, if a near-surface graded-gap layer is created. The dopant distribution profile in the near-surface layer of the semiconductor is found, and it is shown that for structures based on p-Hg0.78Cd0.22Te with a near-surface graded-gap layer, the dopant concentration has a minimum near the interface with the insulator. For MIS structure based on n-Hg0.78Cd0.22Te, the dopant concentration is more uniformly distributed in the near-surface layer of the semiconductor. Keywords MIS structure HgCdTe molecular beam epitaxy graded-gap layer capacitance–voltage characteristic dopant concentration