0.5 V bulk-driven ring amplifier based on master–slave technique

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• 作者：Spyridon Vlassis ; Tomasz Kulej…
• 关键词：Bulk ; driven CMOS ; Low ; voltage low ; power CMOS ; Ring amplifier
• 刊名：Analog Integrated Circuits and Signal Processing
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：90
• 期：1
• 页码：189-197
• 全文大小：
• 刊物类别：Engineering
• 刊物主题：Circuits and Systems; Electrical Engineering; Signal,Image and Speech Processing;
• 出版者：Springer US
• ISSN：1573-1979
• 卷排序：90

文摘

This paper presents a new non-clocked standalone bulk-driven ring amplifier based on master–slave technique that ensures stable operation under process, supply voltage and temperature variations. Unlike the conventional ring amplifier the proposed topology operates without the switched capacitor technique under extremely low supply voltage. The bulk-driven ring amplifier was designed using a triple-well 0.18 µm CMOS technology. The simulation results show a 91 dB gain with 13 μW power dissipation from a 0.5 V supply voltage and the total harmonic distortion was equal to 0.29 %.