SiO x /SiN y multilayers for photovoltaic and photonic applications
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- 作者：Ramesh Pratibha Nalini (1)
Larysa Khomenkova (1)
Olivier Debieu (1)
Julien Cardin (1)
Christian Dufour (1)
Marzia Carrada (2)
Fabrice Gourbilleau (1) - 关键词：SiOx/SiNy ; multilayers ; Nd3+ doping ; photoluminescence ; XRD ; absorption coefficient ; conductivity
- 刊名：Nanoscale Research Letters
- 出版年：2012
- 出版时间：December 2012
- 年：2012
- 卷：7
- 期：1
- 全文大小：558KB
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Larysa Khomenkova (1)
Olivier Debieu (1)
Julien Cardin (1)
Christian Dufour (1)
Marzia Carrada (2)
Fabrice Gourbilleau (1)
1. CIMAP UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bd. Mar茅chal Juin, 14050, Caen Cedex 4, France
2. CEMES/CNRS, 29 rue J. Marvig, 31055, Toulouse, France - ISSN：1556-276X
文摘
Microstructural, electrical, and optical properties of undoped and Nd3+-doped SiO x /SiN y multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiN y as the alternating sublayer instead of SiO2. A high density of silicon nanoclusters of the order 1019 nc/cm3 is achieved in the SiO x sublayers. Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications. Furthermore, the enhancement of Nd3+ emission in these multilayers in comparison with the SiO x /SiO2 counterparts offers promising future photonic applications. PACS: 88.40.fh (Advanced materials development), 81.15.cd (Deposition by sputtering), 78.67.bf (Nanocrystals, nanoparticles, and nanoclusters).