Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers
详细信息 查看全文
- 作者：Marcin Motyka ; Grzegorz Sęk ; Krzysztof Ryczko ; Mateusz Dyksik…
- 关键词：Type II GaIn(As)Sb/GaSb ; QW interface profile ; Intermixing ; Interband cascade lasers ; FTIR spectroscopy ; EDX spectra
- 刊名：Nanoscale Research Letters
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：10
- 期：1
- 全文大小：1,019 KB
- 刊物主题：Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine;
- 出版者：Springer US
- ISSN：1556-276X
文摘
The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga0.665In0.335AsxSb1 − x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend.