Fast and reliable identification of atomically thin layers of TaSe2 crystals
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- 作者：Andres Castellanos-Gomez (1295)
Efrén Navarro-Moratalla (2295)
Guillermo Mokry (3295)
Jorge Quereda (3295)
Elena Pinilla-Cienfuegos (2295)
Nicolás Agra?t (3295) (4295)
Herre S. J. van der Zant (1295)
Eugenio Coronado (2295)
Gary A. Steele (1295)
Gabino Rubio-Bollinger (3295) - 关键词：atomically thin layer ; metal dichalcogenide ; layered superconductor ; TaSe2 ; optical microscopy ; Raman spectroscopy
- 刊名：Nano Research
- 出版年：2013
- 出版时间：March 2013
- 年：2013
- 卷：6
- 期：3
- 页码：191-199
- 全文大小：729KB
- 参考文献：1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. / Science 2004, / 306, 666-69. CrossRef
2. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-dimensional atomic crystals. / Proc. Natl. Acad. Sci. USA 2005, / 102, 10451-0453. CrossRef
3. Ayari, A.; Cobas, E.; Ogundadegbe, O.; Fuhrer, M. S. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides. / J. Appl. Phys. 2007, / 101, 014507. CrossRef
4. Staley, N. E.; Wu, J.; Eklund, P.; Liu, Y.; Li, L. J.; Xu, Z. Electric field effect on superconductivity in atomically thin flakes of NbSe2. / Phys. Rev. B 2009, / 80, 184505. CrossRef
5. Khan, J.; Nolen, C. M.; Teweldebrhan, D.; Wickramaratne, D.; Lake, R. K.; Balandin, A. A. Anomalous electron transport in back-gated field-effect transistors with TiTe2 semimetal thin-film channels. / Appl. Phys. Lett. 2012, / 100, 043109. CrossRef
6. Lee, C.; Yan, H.; Brus, L. E.; Heinz, T. F.; Hone, J.; Ryu, S. Anomalous lattice vibrations of single- and few-layer MoS2. / ACS Nano 2010, / 4, 2695-700. CrossRef
7. Teweldebrhan, D.; Goyal, V.; Rahman, M.; Balandin, A. A. Atomically-thin crystalline films and ribbons of bismuth telluride. / Appl. Phys. Lett. 2010, / 96, 053107. CrossRef
8. Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L.; et al. Boron nitride substrates for high-quality graphene electronics. / Nat. Nanotechnol. 2010, / 5, 722-26. CrossRef
9. Splendiani, A.; Sun, L.; Zhang, Y.; Li, T.; Kim, J.; Chim, C.-Y.; Galli, G.; Wang, F. Emerging photoluminescence in monolayer MoS2. / Nano Lett. 2010, / 10, 1271-275. CrossRef
10. Ramakrishna Matte, H. S. S.; Gomathi, A.; Manna, A. K.; Late, D. J.; Datta, R.; Pati, S. K.; Rao, C. N. R. MoS2 and WS2 analogues of graphene. / Angew. Chem. Int. Ed. 2010, / 49, 4059-062. CrossRef
11. Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. / Nat. Nanotechnol. 2011, / 6, 147-50. CrossRef
12. Castellanos-Gomez, A.; Wojtaszek, M.; Tombros, N.; Agra?t, N.; van Wees, B. J.; Rubio-Bollinger, G. Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene. / Small 2011, / 7, 2491-497.
13. Castellanos-Gomez, A.; Poot, M.; Amor-Amorós, A.; Steele, G.; van der Zant, H.; Agra?t, N.; Rubio-Bollinger, G. Mechanical properties of freely suspended atomically thin dielectric layers of mica. / Nano Res. 2012, / 5, 550-57. CrossRef
14. Castellanos-Gomez, A.; Poot, M.; Steele, G. A.; van der Zant, H. S. J.; Agra?t, N.; Rubio-Bollinger, G. Elastic properties of freely suspended MoS2 nanosheets. / Adv. Mater. 2012, / 24, 772-75. CrossRef
15. Yin, Z. Y.; Li, H.; Li, H.; Jiang L.; Shi, Y. M.; Sun, Y. H.; Lu, G.; Zhang, Q.; Chen, X. D.; Zhang, H. Single-layer MoS2 phototransistors. / ACS Nano 2012, / 6, 74-0. CrossRef
16. Zhan, Y. J.; Liu, Z.; Najmaei, S.; Ajayan, P. M.; Lou, J. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. / Small 2012, / 8, 966-71. CrossRef
17. Zeng, Z. Y.; Yin, Z. Y.; Huang, X.; Li, H.; He, Q. Y.; Lu, G.; Boey, F.; Zhang, H. Single-layer semiconducting nanosheets: High-yield preparation and device fabrication. / Angew. Chem. Int. Ed. 2011, / 50, 11093-1097. CrossRef
18. Zeng, Z. Y.; Sun, T.; Zhu, J. X.; Huang, X.; Yin, Z. Y.; Lu, G; Fan, Z. X.; Yan, Q. Y.; Hng, H. H.; Zhang, H. An effective method for the fabrication of few-layer-thick inorganic nanosheets. / Angew. Chem. Int. Ed. 2012, / 51, 9052-056. CrossRef
19. Liu, K.-K.; Zhang, W. J.; Lee, Y.-H.; Lin, Y.-C.; Chang, M.-T.; Su, C.-Y.; Chang, C.-S.; Li, H.; Shi, Y. M.; Zhang, H.; et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. / Nano Lett. 2012, / 12, 1538-544. CrossRef
20. Li, H.; Lu, G.; Wang, Y. L.; Yin, Z. Y.; Cong, C. X.; He, Q. Y.; Wang, L.; Ding, F.; Yu, T.; Zhang, H. Mechanical exfoliation and characterization of single- and few-layer nanosheets of WSe2, TaS2, and TaSe2. / Small, in press, DOI: 10.1002/smll.201202919.
21. Ferrari, A. C.; Meyer, J. C.; Scardaci, V.; Casiraghi, C.; Lazzeri, M.; Mauri, F.; Piscanec, S.; Jiang, D.; Novoselov, K. S.; Roth, S.; et al. Raman spectrum of graphene and graphene layers. / Phys. Rev. Lett. 2006, / 97, 187401. CrossRef
22. Blake, P.; Hill, E. W.; Neto, A. H. C.; Novoselov, K. S.; Jiang, D.; Yang, R.; Booth, T. J.; Geim, A. K. Making graphene visible. / Appl. Phys. Lett. 2007, / 91, 063124. CrossRef
23. Casiraghi, C.; Hartschuh, A.; Lidorikis, E.; Qian, H.; Harutyunyan, H.; Gokus, T.; Novoselov, K. S.; Ferrari, A. C. Rayleigh imaging of graphene and graphene layers. / Nano Lett. 2007, / 7, 2711-717. CrossRef
24. Jung, I.; Pelton, M.; Piner, R.; Dikin, D. A.; Stankovich, S.; Watcharotone, S.; Hausner, M.; Ruoff, R. S. Simple approach for high-contrast optical imaging and characterization of graphene-based sheets. / Nano Lett. 2007, / 7, 3569-575. CrossRef
25. Roddaro, S.; Pingue, P.; Piazza, V.; Pellegrini, V.; Beltram, F. The optical visibility of graphene: Interference colors of ultrathin graphite on SiO2. / Nano Lett. 2007, / 7, 2707-710. CrossRef
26. Castellanos-Gomez, A.; Agra?t, N.; Rubio-Bollinger, G. Optical identification of atomically thin dichalcogenide crystals. / Appl. Phys. Lett. 2010, / 96, 213116. CrossRef
27. Li, H.; Lu, G.; Yin, Z. Y.; He, Q. Y.; Zhang, Q.; Zhang, H. Optical identification of single-and few-layer MoS2 Sheets. / Small 2012, / 8, 682-86. CrossRef
28. Sengupta, S.; Solanki, H. S.; Singh, V.; Dhara, S.; Deshmukh, M. M. Electromechanical resonators as probes of the charge density wave transition at the nanoscale in NbSe2. / Phys. Rev. B 2010, / 82, 155432. CrossRef
29. Leininger, P.; Chernyshov, D.; Bosak, A.; Berger, H.; Inosov, D. S. Competing charge density waves and temperature-dependent nesting in 2H-TaSe2. / Phys. Rev. B 2011, / 83, 233101.
30. Galvis, J. A.; Rodière, P.; Guillamón, I.; Osorio, M. R.; Rodrigo, J. G.; Cario, L.; Navarro-Moratalla, E.; Coronado, E.; Vieira, S.; Suderow, H. Flat band in superconducting layers of 2H-TaSe2. / arXiv:1210.2659.
31. Nemes-Incze, P.; Osváth, Z.; Kamarás, K.; Biró, L. P. Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy. / Carbon 2008, / 46, 1435-442. CrossRef
32. Castellanos-Gomez, A.; Arroyo, C. R.; Agra?t, N.; Rubio-Bollinger, G. Calibration of piezoelectric positioning actuators using a reference voltage-to-displacement transducer based on quartz tuning forks. / Microsc. Microanal. 2012, / 18, 353-58.
33. Moreno-Moreno, M.; Castellanos-Gomez, A.; Rubio-Bollinger, G.; Gomez-Herrero, J.; Agra?t, N. Ultralong natural graphene nanoribbons and their electrical conductivity. / Small 2009, / 5, 924-27. CrossRef
34. Moser, J.; Verdaguer, A.; Jiménez, D.; Barreiro, A.; Bachtold, A. The environment of graphene probed by electrostatic force microscopy. / Appl. Phys. Lett. 2008, / 92, 123507. CrossRef
35. Kvavle, J.; Bell, C.; Henrie, J.; Schultz, S.; Hawkins, A. Improvement to reflective dielectric film color pictures. / Opt. Express 2004, / 12, 5789-794. CrossRef
36. McWhan, D. B.; Fleming, R. M.; Moncton, D. E.; DiSalvo, F. J. Reentrant lock-in transition of the charge-density wave in 2H-TaSe2 at high pressure. / Phys. Rev. Lett. 1980, / 45, 269-72. CrossRef
37. Beal, A. R.; Hughes, H. P.; Liang, W. Y. The reflectivity spectra of some group / VA transition metal dichalcogenides. / J. Phys. C Solid State Phys. 1975, / 8, 4236. CrossRef
38. Wald, G. Human vision and the spectrum. / Science 1945, / 101, 653-58. CrossRef
39. Graf, D.; Molitor, F.; Ensslin, K.; Stampfer, C.; Jungen, A.; Hierold, C.; Wirtz, L. Spatially resolved Raman spectroscopy of single-and few-layer graphene. / Nano Lett. 2007, / 7, 238-42. CrossRef
40. Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. / Phys. Rev. Lett. 2010, / 105, 136905. CrossRef
41. Korn, T.; Heydrich, S.; Hirmer, M.; Schmutzler, J.; Schüller, C. Low-temperature photocarrier dynamics in monolayer MoS2. / Appl. Phys. Lett. 2011, / 99, 102109. CrossRef
42. Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. / Phys. Rev. Lett. 2010, / 105, 136805. CrossRef
43. Holy, J. A.; Klein, M. V.; McMillan, W. L.; Meyer, S. F. Raman-active lattice vibrations of the commensurate superlattic in 2H-TaSe2. / Phys. Rev. Lett. 1976, / 37, 1145-148. CrossRef
44. Tsang, J.; Shafer, M. Raman spectroscopy of intercalated layered structure compounds. / Solid State Commun. 1978, / 25, 999-002. CrossRef
45. Li, T.; Galli, G. Electronic Properties of MoS2 Nanoparticles. / J. Phys. Chem. C 2007, / 111, 16192-6196. CrossRef
46. Molina-Sánchez, A.; Wirtz, L. Phonons in single-layer and few-layer MoS2 and WS2. / Phys. Rev. B 2011, / 84, 155413. CrossRef
47. Koh, Y. K.; Bae, M. H.; Cahill, D. G.; Pop, E. Reliably counting atomic planes of few-layer graphene ( / n > 4). / ACS Nano 2011, / 5, 269-74. CrossRef
48. Castellanos-Gomez, A.; Barkelid, M.; Goossens, A. M.; Calado, V. E.; van der Zant, H. S. J.; Steele, G. A. Laser-thinning of MoS2: On demand generation of a single-layer semiconductor. / Nano Lett. 2012, / 12, 3187-192. CrossRef - 作者单位：Andres Castellanos-Gomez (1295)
Efrén Navarro-Moratalla (2295)
Guillermo Mokry (3295)
Jorge Quereda (3295)
Elena Pinilla-Cienfuegos (2295)
Nicolás Agra?t (3295) (4295)
Herre S. J. van der Zant (1295)
Eugenio Coronado (2295)
Gary A. Steele (1295)
Gabino Rubio-Bollinger (3295)
1295. Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
2295. Instituto Ciencia Molecular (ICMol), Univ. Valencia, C/Catedrático José Beltrán 2, E-46980, Paterna, Spain
3295. Departamento de Física de la Materia Condensada (C-III), Universidad Autónoma de Madrid, Campus de Cantoblanco, 28049, Madrid, Spain
4295. Instituto Madrile?o de Estudios Avanzados en Nanociencia IMDEA-Nanociencia, E-28049, Madrid, Spain - ISSN：1998-0000
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